2sa2124 no.7920-1/7 applicaitons ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of mbit processes ? low collector-to-emitter saturation voltage ? large current capacity ? high-speed switching speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --30 v collector-to-emitter voltage v ceo --30 v emitter-to-base voltage v ebo -- 6 v collector current i c -- 2 a collector current (pulse) i cp -- 5 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en7920b o1712 tkim tc-00002827/80509 tkim tc-00002048/d2004ea tsim tb-00000072 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa2124-td-e ax lot no. 2 3 1 2sa2124 pnp epitaxial planar silicon transistor high-current switching applications
2sa2124 no.7920-2/7 continued from preceding page. parameter symbol conditions ratings unit base current i b --400 ma collector dissipation p c when mounted on ceramic substrate (450mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =--30v, i e =0a --0.1 a emitter cutoff current i ebo v eb =--4v, i c =0a --0.1 a dc current gain h fe 1v ce =--2v, i c =--100ma 200 560 h fe 2v ce =--2v, i c =--1.5a 65 gain-bandwidth product f t v ce =--10v, i c =--300ma 440 mhz collector-to-emitter saturation voltage v ce (sat) i c =--1.5a, i b =--75ma --0.2 --0.4 v base-to-emitter saturation voltage v be (sat) i c =--1.5a, i b =--75ma --0.95 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 a, i e =0a --30 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --30 v emitter-to-base breakdown voltage v (br)ebo i e =--10 a, i c =0a --6 v output capacitance cob v cb =--10v, f=1mhz 17 pf turn-on time t on see speci ed test circuit. 45 ns storage time t stg 200 ns fall time t f 23 ns switching time test circuit ordering information device package shipping memo 2sa2124-td-e pcp 1,000pcs./reel pb free v r r b v cc = --12v v be =5v + + 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i c i b2 i c =20i b1 = --20i b2 = --0.5a
2sa2124 no.7920-3/7 --2.0 --1.8 --1.6 --1.2 --1.4 --0.8 --1.0 --0.4 --0.6 --0.2 0 --0.4 0 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 i c -- v ce it07248 --10ma --15ma --20ma --25ma --40ma i b =0ma --5ma --2ma ta=75 c 25 c --25 c v ce = --2v --2.0 --1.0 --0.5 --1.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 i c -- v be it07249 --35ma --30ma collector-to-emitter voltage, v ce -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a cob -- v cb 5 3 2 10 7 --0.1 37 25 37 25 3 2 --1.0 --10 5 it07252 f=1mhz --0.1 2 3 5 7 2 3 5 --0.01 --0.01 --0.1 23 57 23 57 23 5 --1.0 v ce (sat) -- i c ta=75 c -- 2 5 c it07253 i c / i b =20 25 c it07255 a s o v be (sat) -- i c 3 --1.0 3 --0.01 --0.1 --1.0 ta= --25 c 25 c 75 c 2 7 5 23 57 23 5 23 57 i c / i b =20 it07254 collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --10 --0.1 --0.01 23 57 --0.1 --1.0 23 57 --10 23 5 100ms dc operation 10ms i cp = --5a i c = --2a 1ms dissipation limited s / b limited 100 s 500 s < 10 s tc=25 c single pulse ta=75 c 25 c --25 c 7 100 7 5 3 2 5 --0.01 3 25 --0.1 73 257 23 --1.0 h fe -- i c v ce = --2v it07250 f t -- i c 100 2 7 5 1000 7 5 3 --0.01 257 3257 323 --0.1 --1.0 it07251 v ce = --10v collector current, i c -- a dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- a
2sa2124 no.7920-4/7 0 1.4 0.6 0.8 1.0 1.2 1.3 0.4 0.2 20 060 40 80 100 140 120 160 p c -- ta it07256 collector dissipation, p c -- w ambient temperature, ta -- c mounted on a ceramic board (450mm 2 ? 0.8mm) p c -- tc collector dissipation, p c -- w case temperature, tc -- c 4.0 0.5 0 160 20 0 it08355 40 60 80 1.0 1.5 2.0 2.5 3.0 3.5 100 120 140
2sa2124 no.7920-5/7 bag packing speci cation 2sa2124-td-e
2sa2124 no.7920-6/7 outline drawing land pattern example 2sa2124-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sa2124 ps no.7920-7/7 this catalog provides information as of october, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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